TSMC reworks 0.13µm for RF integration

by Electronics news desk

Taiwanese foundry TSMC has gone back to its 0.13µm process, originally launched at the start of the decade, and developed a new version to capture a new generation of radio communications devices.

The 0.13μm and the 0.11μm half-node shrink processes have been given redesigned ‘slim’ SRAM and I/O cells that use up to 25 per cent and 30 per cent less, respectively. To be made available by the end of this year is a module that combines the standard CMOS process with laterally diffused (LD) MOS transistors that operate up to 20V, to allow a wider range of RF and power management circuits to be placed on-chip. The ‘slim’ platform will be available in the third quarter.

“This is another example of how TSMC is committed to enabling more efficient SoC design of wireless, consumer and communications devices using 0.13μm process technology,” claimed Simon Wang, senior director of TSMC’s advanced technology business division.

TSMC said the process will allow true 5V operation for analogue circuits and watt-scale class-D amplification, putting them on a chip with copper interconnect that can support digital signal processing.